University Publications

As a part of my study on the microstructural, magnetic, optical, and electrical properties of Chalcogenide materials doped transition metals thin films, this paper (Part I) presents a brief review on the microstructure and magnetic properties of GeTe phase change material with transition metal (TM) Doping. The deposition and characterization technique were demonstrated. The evaluation results Clearfield that the microstructure of GeTe doped transition metal was influenced by TM ions and the crystallographic phase structure was observed similar to the pure GeTe structure. The ferromagnetic property of GeTe was found strongly modified with some of the TM (Fe, Mn, and Cr) doping at temperature 2°K and at the same time is not much affected with some other TM (Ni, V, Ti and Co) doping. Moreover, the ferromagnetism of Ge1-xCrxTe thin film was dependent on the stoichiometric ratio, while the ferromagnetism of Ge1-xMnxTe films was influenced by the defects and dependent strongly on the hole concentration. The difference was attributing to the interaction of the ferromagnetic order. Unlike Ge1-xMnxTe in the long range RKKY ferromagnetic exchange interaction, short-range order such as a super exchange mechanism plays more important role in the ferromagnetism of the Ge1-xCrxTe films.